Advanced MCPs for the Changing Mobile Market

An interview with Eric Spanneut, director of mobile memory marketing.

Chris Smith: Eric, thanks for talking with me today. I’ve noticed that Micron has been focusing more and more energy on the mobile market. Today, the company introduced a new line of MCPs; could you tell me a bit about these products?

Eric Spanneut: We are announcing the adoption of our latest process technologies—both NAND and DRAM—to our line of high-end MCPs. It means that we have leveraged our 34nm single-level cell (SLC) technology on the NAND side, as well as our 50nm technology on the low-power DRAM side.

Chris: Is this the first 50nm designed into your MCP products?

Eric: This is our first monolithic 2Gb LPDRAM, which is being adopted by our MCP product line.

Chris: What range of the mobile market will these MCPs serve?

Eric: These products will serve the high-end feature phone market, and the smart phone market that uses open operating system like Windows Mobile, Android, or Symbian, as well as the nascent mobile internet device (MID) market.

Chris: I notice that this MCP uses LPDDR, but I know you manufacture LPDDR2; when will you transition this MCP to LPDDR2?

Eric: We see growing interest in LPDDR2, but first adoption by handset vendors won’t happen until second half of 2010. We expect LPDDR to be the front-runner in terms of volume for the next three to four years. That said, when the transition does begin, handset vendors will recognize significant advantages with LPDDR2, including reduced pin count, higher frequency and a better power budget.

Chris: So, if LPDDR2 has these benefits, why isn’t it being widely adopted at this time?

Eric: The mobile value chain is a very complex one with a complex ecosystem. It always takes a long time for a new technology to be massively adopted.

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Windows 7: One Small Step for SSDs, a Giant Step for NAND-kind

Microsoft’s new Windows 7 is the first operating system to detect the presence of a solid state drive (SSD) in a system and then optimize the OS to boost performance and endurance of the drive’s NAND flash memory blocks.

Call it another sign the era of mechanical hard drive domination is ending. And another small step toward flash freedom.

“This is the first step, and as good as Windows 7 is for SSDs, it’s still a baby step with so much more potential ahead,” Dean Klein, Micron’s SSD guru and vice president of memory system development told me in an interview.

I wanted to talk to Dean for the SSD perspective on Windows 7 after last week’s conversation with Micron’s Matthias Buchner on what impact Windows 7 will have on DRAM.

Dean was kind enough to break away from his busy schedule developing Micron’s next generation RealSSD™ products to wax evangelical about the breakthrough that Windows 7 represents in designing operating systems that optimize SSD technology, rather than accommodate the shortcomings of the mechanical hard drive.

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Enterprise NAND—Some Industry Perspective

We’ve had tremendous feedback from customers, partners, media and analysts on our Enterprise NAND announcement.  So I thought I’d include a couple of perspectives from the industry on the potential impact of Enterprise NAND:

• “a significant milestone for the industry, one that’s likely to increase confidence in the technology.”
—Bob Merritt, analyst
InternetNews.com

• “proves wrong all those people who think that high-endurance devices will never be supported by advancing lithographies.”
—Jim Handy, analyst
Enterprise Storage Forum

• “Micron made a major announcement this week touting a new memory structure that simultaneously drives up the density and write performance of current Flash memory.”
IT Business Edge

Ready for Windows 7? Don’t Forget the Memory.

I had a chance to sit down with Micron’s Matthias Buchner, director of segment marketing for Micron’s DRAM product group, to talk about the launch of Windows 7, the memory impact and other trends in the industry.

Chris Smith: Thanks Matthias for talking with me. I was hoping you could give us some perspective on how the launch of Windows 7 today will impact DRAM demand?

Matthias Buchner:  Sure, happy to talk with you. It’s important that we first look at it from the OS perspective, and then I’ll touch on the DRAM impact. In general, consumers have been waiting for a reason to purchase an upgraded PC for years. Whereas Windows Vista was an evolutionary step, industry insiders believe that Windows 7 is the revolutionary catalyst that will bring would-be PC buyers off of the sidelines and into the PC market.  While I expect that Windows 7 memory content will increase to 4GB from 2GB, I also believe that the launch of Windows 7 will spur DRAM bit growth through increased PC unit sales. Unit growth should be driven by consumers in calendar 2010, followed by the enterprise applications in calendar 2011.

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Huge Reliability from Tiny NAND

Since introducing our 34nm NAND nearly a year ago, we’ve made big  strides in both performance and reliability. Now, nearly all of our NAND products are built on 34nm—leading the industry in density and efficiency.

In fact, our 34nm process is so solid, we’ve even moved our super-high cycling Enterprise NAND parts to it. We just announced 34nm SLC and MLC Enterprise NAND parts that can hit 300,000 and 30,000 cycles, respectively. These new parts deliver unmatched density, cost-efficiency, and reliability and will open up new potential for NAND storage in enterprise applications.  Watch my quick explanation below to understand why.

Is NAND Ready For Enterprise Applications?

There’s been a lot of discussion lately about NAND in enterprise applications. Can NAND hit enterprise requirements? Will sub-40nm NAND ever serve this market? Is it really a compelling choice? Put simply: yes. Here are a few reasons why:

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Tripling NAND Performance in Mobile Systems

We’ve been getting great response from customers who’ve seen our NAND performance demonstration, so we wanted to share it with a wider audience.

The test pits our single- and dual-plane SLC devices and NANDCode™ FTL software against Samsung’s OneNAND™ running on Microsoft’s FTL. The test system is a TI OMAP™ 3430 development platform running Windows Mobile® 6.5 OS. We changed out the onboard NAND with a simple PISMO card swap and then ran a 10MB system performance test.

The results are impressive and undeniable. The key is our custom NANDCode FTL software, which enables advanced performance features like dual-plane programming.

Watch the video below to see why some of our competitors’ customers have been willing to open their design cycles to take advantage of the big NAND performance gains offered by Micron’s MCPs.

Visit our Web site to learn more about our NANDCode software and how you can use it to boost performance in your next mobile design.

A look Inside the Flash Memory Summit ‘09

Micron’s Kevin Kilbuck, director of strategic NAND marketing talks about the hottest buzz happening at this year’s FMS. It’s been a lively show this year, with an interesting debate about bringing high-quality NAND to enterprise applications, as well as a big announcement from us and Intel on 3-bit-per-cell MLC NAND technology. Let us know what you think about our interview with Kevin, and be sure to stay tuned for future news and updates.

SLC, MLC, & 3-bit MLC NAND—What’s the Difference?

In this 5-minute whiteboard video, strategic marketing director Kevin Kilbuck provides a brief description of the technical differences between SLC, MLC, and 3-bit MLC NAND. He also discusses how these products fit into a NAND process roadmap and why 3-bit MLC can be an effective complement an aggressive shrink roadmap (not a substitute for one). You’ll learn:

•    How the cell bit count controls the relationship between die size and density
•    Why cell density affects performance and reliability
•    Why 3-bit MLC is only suited for specific applications
•    How 3-bit MLC can complement an aggressive shrink roadmap
•    Why NAND process windows are going to grow in the coming years

Find out more about choosing the right NAND on micron.com/nand.

Driving the Next Generation of Server Performance with LRDIMMs

Today we announced the world’s first DDR3 LRDIMMs, built with our advanced 50nm, 2Gb DDR3 components. If you’re in the server industry, you know that load-reduced DIMMs are going to deliver some much-needed performance and bandwidth boosts for next-generation servers. Their much higher capacity and performance specs mean that early LRDIMM servers will have up to 57% better bandwidth and as much as three times the memory density—up to 144GB. And you can expect those specs to rise as mainstream DDR3 production moves from 2Gb components to 4Gb and beyond.

How do they do it? Basically, an eight-rank LRDIMM can reduce memory load to a single load per channel (traditional RDIMM loads correspond to the number of ranks; dual-rank=2 loads, quad-rank=4 loads). Lower loads means you can put more DIMMs on a channel (and/or run the modules faster, depending on the configuration), boosting performance and memory density. LRDIMMs are also capable of much higher densities than RDIMMs; we’re making 16GB LRDIMMs today and plan for higher densities in the future.

We’re currently sampling these to buffer suppliers (to make sure our LRDIMMs are as fast and reliable as possible) and a few select server OEMs. You can probably expect to see ultra-high density, high-performance LRDIMM servers hitting the market before mid-year 2010. Want to know more? Visit our LRDIMM home page for full specs.